RJK6002DPD-00#J2 - MOSFET N-CH 600V 2A MP3A

Fabricant Nimewo Pati

RJK6002DPD-00#J2

Entèn Nimewo Pati

AX-RJK6002DPD-00#J2

Fabricant

Renesas Electronics America

Kout Deskripsyon

MOSFET N-CH 600V 2A MP3A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

17376 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RJK6002DPD-00#J2 nan stock pou vann.

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Espesifikasyon pou RJK6002DPD-00#J2

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RJK6002DPD-00#J2

Fabricant : Renesas Electronics America

Deskripsyon : MOSFET N-CH 600V 2A MP3A

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 6.8 Ohm @ 1A, 10V

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : 6.2nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 165pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 30W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : MP-3A

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RJK60 , RJK6002D

dokiman pou RJK6002DPD-00#J2

Fich : RJK6002DPD-00#J2.pdf

pwodwi ki gen rapò pou RJK6002DPD-00#J2 Renesas Electronics America

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