FDP86363-F085 - MOSFET N-CH 80V 110A TO-220

Fabricant Nimewo Pati

FDP86363-F085

Entèn Nimewo Pati

AX-FDP86363-F085

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 80V 110A TO-220

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

20856 Pieces

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pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou FDP86363-F085

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDP86363-F085

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 80V 110A TO-220

Seri : Automotive, AEC-Q101, PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 80V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 110A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 2.8 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 150nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 10000pF @ 40V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 300W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220-3

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDP8 , FDP863

dokiman pou FDP86363-F085

Fich : FDP86363-F085.pdf

pwodwi ki gen rapò pou FDP86363-F085 ON Semiconductor

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