BAQ33-GS18 - DIODE GEN PURP 30V 200MA SOD80

Fabricant Nimewo Pati

BAQ33-GS18

Entèn Nimewo Pati

AX-BAQ33-GS18

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 30V 200MA SOD80

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

11012880 Pieces

referans pri

~~USD 0.025476~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BAQ33-GS18 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BAQ33-GS18

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BAQ33-GS18

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 30V 200MA SOD80

Seri : -

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 30V

Kouran - Mwayèn Rèktifye (Io) : 200mA

Voltage - Forward (Vf) (Max) @ Si : 1V @ 100mA

Vitès : Small Signal =< 200mA (Io), Any Speed

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 1nA @ 15V

Kapasite @ Vr, F : 3pF @ 0V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : DO-213AC, MINI-MELF, SOD-80

Pake Aparèy Founisè : SOD-80 MiniMELF

Operating Tanperati - Junction : -65°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BAQ , BAQ33

dokiman pou BAQ33-GS18

Fich : BAQ33-GS18.pdf

pwodwi ki gen rapò pou BAQ33-GS18 Vishay Semiconductor Diodes Division

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