FDG361N - MOSFET N-CH 100V 0.6A SC70-6

Fabricant Nimewo Pati

FDG361N

Entèn Nimewo Pati

AX-FDG361N

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 0.6A SC70-6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

69280 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDG361N nan stock pou vann.

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Espesifikasyon pou FDG361N

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDG361N

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 0.6A SC70-6

Seri : PowerTrench®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 600mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 500 mOhm @ 600mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 5nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 153pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 420mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SC-88 (SC-70-6)

Pake / Ka : 6-TSSOP, SC-88, SOT-363

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FD , FDG

dokiman pou FDG361N

Fich : FDG361N.pdf

pwodwi ki gen rapò pou FDG361N ON Semiconductor

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