FDD86567-F085 - MOSFET N-CH 60V 100A DPAK

Fabricant Nimewo Pati

FDD86567-F085

Entèn Nimewo Pati

AX-FDD86567-F085

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 60V 100A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

660085 Pieces

referans pri

~~USD 0.42504~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDD86567-F085 nan stock pou vann.

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Espesifikasyon pou FDD86567-F085

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDD86567-F085

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 60V 100A DPAK

Seri : Automotive, AEC-Q101, PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 3.2 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 82nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 4950pF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 227W (Tj)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D-PAK (TO-252)

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDD8 , FDD865

dokiman pou FDD86567-F085

Fich : FDD86567-F085.pdf

pwodwi ki gen rapò pou FDD86567-F085 ON Semiconductor

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