CDBGBSC201200-G - DIODE DUAL SILICON CARBIDE POWER

Fabricant Nimewo Pati

CDBGBSC201200-G

Entèn Nimewo Pati

AX-CDBGBSC201200-G

Fabricant

Comchip Technology

Kout Deskripsyon

DIODE DUAL SILICON CARBIDE POWER

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

41328 Pieces

referans pri

~~USD 8.144388~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen CDBGBSC201200-G nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou CDBGBSC201200-G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : CDBGBSC201200-G

Fabricant : Comchip Technology

Deskripsyon : DIODE DUAL SILICON CARBIDE POWER

Seri : -

Estati Pati : Active

Konfigirasyon dyòd : 1 Pair Common Cathode

Kalite dyòd : Silicon Carbide Schottky

Voltage - DC Ranvèse (Vr) (Max) : 1200V

Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 25.9A (DC)

Voltage - Forward (Vf) (Max) @ Si : 1.8V @ 10A

Vitès : No Recovery Time > 500mA (Io)

Ranvèse Tan Reverse (trr) : 0ns

Kouran - Fèy Reverse @ Vr : 100µA @ 1200V

Operating Tanperati - Junction : -55°C ~ 175°C

Mounting Kalite : Through Hole

Pake / Ka : TO-247-3

Pake Aparèy Founisè : TO-247

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : CDBGB , CDBGBSC

dokiman pou CDBGBSC201200-G

Fich : CDBGBSC201200-G.pdf

pwodwi ki gen rapò pou CDBGBSC201200-G Comchip Technology

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