RQ3E080BNTB - MOSFET N-CH 30V 8A HSMT8

Fabricant Nimewo Pati

RQ3E080BNTB

Entèn Nimewo Pati

AX-RQ3E080BNTB

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET N-CH 30V 8A HSMT8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

4403075 Pieces

referans pri

~~USD 0.06372~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou RQ3E080BNTB

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RQ3E080BNTB

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET N-CH 30V 8A HSMT8

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 15.2 mOhm @ 8A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 14.5nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 660pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2W (Ta)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-HSMT (3.2x3)

Pake / Ka : 8-PowerVDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RQ3 , RQ3E0

dokiman pou RQ3E080BNTB

Fich : RQ3E080BNTB.pdf

pwodwi ki gen rapò pou RQ3E080BNTB Rohm Semiconductor

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