EFC6601R-A-TR - MOSFET 2N-CH EFCP

Fabricant Nimewo Pati

EFC6601R-A-TR

Entèn Nimewo Pati

AX-EFC6601R-A-TR

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET 2N-CH EFCP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

28462 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen EFC6601R-A-TR nan stock pou vann.

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Espesifikasyon pou EFC6601R-A-TR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : EFC6601R-A-TR

Fabricant : ON Semiconductor

Deskripsyon : MOSFET 2N-CH EFCP

Seri : -

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual) Common Drain

Karakteristik FET : Logic Level Gate, 2.5V Drive

Drenaj nan Voltage Sous (Vdss) : -

Kouran - Drenaj Kontinye (Id) @ 25 ° C : -

RD sou (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : 48nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : -

Pouvwa - Max : 2W

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 6-XFBGA, FCBGA

Pake Aparèy Founisè : EFCP2718-6CE-020

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : EFC6 , EFC660

dokiman pou EFC6601R-A-TR

Fich : EFC6601R-A-TR.pdf

pwodwi ki gen rapò pou EFC6601R-A-TR ON Semiconductor

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