TK31V60X,LQ - MOSFET N-CH 600V 30.8A 5DFN

Fabricant Nimewo Pati

TK31V60X,LQ

Entèn Nimewo Pati

AX-TK31V60X,LQ

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 600V 30.8A 5DFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

191735 Pieces

referans pri

~~USD 1.46328~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TK31V60X,LQ nan stock pou vann.

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Espesifikasyon pou TK31V60X,LQ

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TK31V60X,LQ

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 600V 30.8A 5DFN

Seri : DTMOSIV-H

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30.8A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 98 mOhm @ 9.4A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 1.5mA

Chaje Gate (Qg) (Max) @ Vgs : 65nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 3000pF @ 300V

Karakteristik FET : Super Junction

Disipasyon Pouvwa (Max) : 240W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 4-DFN-EP (8x8)

Pake / Ka : 4-VSFN Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TK3 , TK31V

dokiman pou TK31V60X,LQ

Fich : TK31V60X,LQ.pdf

pwodwi ki gen rapò pou TK31V60X,LQ Toshiba Semiconductor and Storage

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