ECH8601M-TL-H-P - MOSFET 2N-CH

Fabricant Nimewo Pati

ECH8601M-TL-H-P

Entèn Nimewo Pati

AX-ECH8601M-TL-H-P

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET 2N-CH

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

28903 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen ECH8601M-TL-H-P nan stock pou vann.

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Espesifikasyon pou ECH8601M-TL-H-P

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : ECH8601M-TL-H-P

Fabricant : ON Semiconductor

Deskripsyon : MOSFET 2N-CH

Seri : -

Estati Pati : Obsolete

FET Kalite : 2 N-Channel (Dual) Common Drain

Karakteristik FET : Logic Level Gate, 2.5V Drive

Drenaj nan Voltage Sous (Vdss) : 24V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Ta)

RD sou (Max) @ Id, Vgs : 23 mOhm @ 4A, 4.5V

Vgs (th) (Max) @ Id : 1.3V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 7.5nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : -

Pouvwa - Max : -

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SMD, Flat Lead

Pake Aparèy Founisè : 8-ECH

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : ECH86 , ECH8601

dokiman pou ECH8601M-TL-H-P

Fich : ECH8601M-TL-H-P.pdf

pwodwi ki gen rapò pou ECH8601M-TL-H-P ON Semiconductor

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