SI4800BDY-T1-GE3 - MOSFET N-CH 30V 6.5A 8-SOIC

Fabricant Nimewo Pati

SI4800BDY-T1-GE3

Entèn Nimewo Pati

AX-SI4800BDY-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 30V 6.5A 8-SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1435340 Pieces

referans pri

~~USD 0.195468~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI4800BDY-T1-GE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SI4800BDY-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI4800BDY-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 30V 6.5A 8-SOIC

Seri : TrenchFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.5A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 18.5 mOhm @ 9A, 10V

Vgs (th) (Max) @ Id : 1.8V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 13nC @ 5V

Vgs (Max) : ±25V

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.3W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SO

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI480 , SI4800BD

dokiman pou SI4800BDY-T1-GE3

Fich : SI4800BDY-T1-GE3.pdf

pwodwi ki gen rapò pou SI4800BDY-T1-GE3 Vishay Siliconix

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