IRFHE4250DTRPBF - MOSFET 2N-CH 25V 86A/303A PQFN

Fabricant Nimewo Pati

IRFHE4250DTRPBF

Entèn Nimewo Pati

AX-IRFHE4250DTRPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET 2N-CH 25V 86A/303A PQFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

28497 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRFHE4250DTRPBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRFHE4250DTRPBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRFHE4250DTRPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET 2N-CH 25V 86A/303A PQFN

Seri : FASTIRFET™

Estati Pati : Obsolete

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 25V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 86A, 303A

RD sou (Max) @ Id, Vgs : 2.75 mOhm @ 27A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 35µA

Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 1735pF @ 13V

Pouvwa - Max : 156W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 32-PowerWFQFN

Pake Aparèy Founisè : 32-PQFN (6x6)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRFHE , IRFHE42

dokiman pou IRFHE4250DTRPBF

Fich : IRFHE4250DTRPBF.pdf

pwodwi ki gen rapò pou IRFHE4250DTRPBF Infineon Technologies

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