SI7960DP-T1-E3 - MOSFET 2N-CH 60V 6.2A PPAK SO-8

Fabricant Nimewo Pati

SI7960DP-T1-E3

Entèn Nimewo Pati

AX-SI7960DP-T1-E3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2N-CH 60V 6.2A PPAK SO-8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

26957 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI7960DP-T1-E3 nan stock pou vann.

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Espesifikasyon pou SI7960DP-T1-E3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI7960DP-T1-E3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2N-CH 60V 6.2A PPAK SO-8

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.2A

RD sou (Max) @ Id, Vgs : 21 mOhm @ 9.7A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 75nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : -

Pouvwa - Max : 1.4W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : PowerPAK® SO-8 Dual

Pake Aparèy Founisè : PowerPAK® SO-8 Dual

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI79 , SI7960D

dokiman pou SI7960DP-T1-E3

Fich : SI7960DP-T1-E3.pdf

pwodwi ki gen rapò pou SI7960DP-T1-E3 Vishay Siliconix

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