1N5809US - DIODE GEN PURP 100V 3A B-MELF

Fabricant Nimewo Pati

1N5809US

Entèn Nimewo Pati

AX-1N5809US

Fabricant

Microsemi Corporation

Kout Deskripsyon

DIODE GEN PURP 100V 3A B-MELF

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

49650 Pieces

referans pri

~~USD 6.78~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen 1N5809US nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou 1N5809US

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : 1N5809US

Fabricant : Microsemi Corporation

Deskripsyon : DIODE GEN PURP 100V 3A B-MELF

Seri : -

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 100V

Kouran - Mwayèn Rèktifye (Io) : 3A

Voltage - Forward (Vf) (Max) @ Si : 875mV @ 4A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 30ns

Kouran - Fèy Reverse @ Vr : 5µA @ 100V

Kapasite @ Vr, F : 60pF @ 10V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : SQ-MELF, B

Pake Aparèy Founisè : B, SQ-MELF

Operating Tanperati - Junction : -65°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : 1N , 1N58

dokiman pou 1N5809US

Fich : 1N5809US.pdf

pwodwi ki gen rapò pou 1N5809US Microsemi Corporation

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