V12P10HE3/86A - DIODE SCHOTTKY 100V 12A TO277A

Fabricant Nimewo Pati

V12P10HE3/86A

Entèn Nimewo Pati

AX-V12P10HE3/86A

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE SCHOTTKY 100V 12A TO277A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

7992 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen V12P10HE3/86A nan stock pou vann.

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Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou V12P10HE3/86A

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : V12P10HE3/86A

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE SCHOTTKY 100V 12A TO277A

Seri : eSMP®, TMBS®

Estati Pati : Obsolete

Kalite dyòd : Schottky

Voltage - DC Ranvèse (Vr) (Max) : 100V

Kouran - Mwayèn Rèktifye (Io) : 12A

Voltage - Forward (Vf) (Max) @ Si : 700mV @ 12A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 250µA @ 100V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : TO-277, 3-PowerDFN

Pake Aparèy Founisè : TO-277A (SMPC)

Operating Tanperati - Junction : -40°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : V12P , V12P10

dokiman pou V12P10HE3/86A

Fich : V12P10HE3/86A.pdf

pwodwi ki gen rapò pou V12P10HE3/86A Vishay Semiconductor Diodes Division

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