SI1026X-T1-GE3 - MOSFET 2N-CH 60V 0.305A SC89-6

Fabricant Nimewo Pati

SI1026X-T1-GE3

Entèn Nimewo Pati

AX-SI1026X-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2N-CH 60V 0.305A SC89-6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2809795 Pieces

referans pri

~~USD 0.099852~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI1026X-T1-GE3 nan stock pou vann.

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Espesifikasyon pou SI1026X-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI1026X-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2N-CH 60V 0.305A SC89-6

Seri : -

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 305mA

RD sou (Max) @ Id, Vgs : 1.4 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 0.6nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 30pF @ 25V

Pouvwa - Max : 250mW

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : SOT-563, SOT-666

Pake Aparèy Founisè : SC-89-6

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI10 , SI1026X

dokiman pou SI1026X-T1-GE3

Fich : SI1026X-T1-GE3.pdf

pwodwi ki gen rapò pou SI1026X-T1-GE3 Vishay Siliconix

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