TK10A60W,S4VX - MOSFET N-CH 600V 9.7A TO-220SIS
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 600V 9.7A TO-220SIS
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
166995 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen TK10A60W,S4VX nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
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Espesifikasyon pou TK10A60W,S4VX
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
TK10A60W,S4VX
Fabricant :
Toshiba Semiconductor and Storage
Deskripsyon :
MOSFET N-CH 600V 9.7A TO-220SIS
Seri :
DTMOSIV
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
380 mOhm @ 4.9A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
700pF @ 300V
Karakteristik FET :
Super Junction
Disipasyon Pouvwa (Max) :
30W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220SIS
Pake / Ka :
TO-220-3 Full Pack
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou TK10A60W,S4VX
Fich :
TK10A60W,S4VX.pdf
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