IXFH60N65X2 - MOSFET N-CH 650V 60A TO-247

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 650V 60A TO-247
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
54050 Pieces
referans pri
USD 5.19
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IXFH60N65X2 nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou IXFH60N65X2

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : IXFH60N65X2
Fabricant : IXYS
Deskripsyon : MOSFET N-CH 650V 60A TO-247
Seri : HiPerFET™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 52 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 107nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 6180pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 780W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : -
Pake / Ka : TO-247-3
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : IXF , IXFH6

dokiman pou IXFH60N65X2

pwodwi ki gen rapò pou IXFH60N65X2 IXYS

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