IR2112PBF - IC MOSFET DVR HI/LO SIDE 14-DIP

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
IC MOSFET DVR HI/LO SIDE 14-DIP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
150255 Pieces
referans pri
USD 2.076
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IR2112PBF nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Espesifikasyon pou IR2112PBF

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : IR2112PBF
Fabricant : Infineon Technologies
Deskripsyon : IC MOSFET DVR HI/LO SIDE 14-DIP
Seri : -
Estati Pati : Active
Kondwi konte genyen : Half-Bridge
Kalite Chèn : Independent
Kantite Chofè yo : 2
Kalite Gate : IGBT, N-Channel MOSFET
Voltage - Pwovizyon pou : 10V ~ 20V
Vòltaj lojik - VIL, VIH : 6V, 9.5V
Kouran - Peak Sòti (Sous, Lavabo) : 250mA, 500mA
Kalite Antre : Non-Inverting
Segondè Voltage Side - Max (Bootstrap) : 600V
Rise / Fall Time (Tip) : 80ns, 40ns
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : 14-DIP (0.300", 7.62mm)
Pake Aparèy Founisè : 14-DIP
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : IR2 , IR21

dokiman pou IR2112PBF

Fich : IR2112PBF.pdf

pwodwi ki gen rapò pou IR2112PBF Infineon Technologies

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