BAS19-HE3-08 - DIODE GEN PURP 100V 200MA SOT23

Fabricant Nimewo Pati

BAS19-HE3-08

Entèn Nimewo Pati

AX-BAS19-HE3-08

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 100V 200MA SOT23

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

14423415 Pieces

referans pri

~~USD 0.019452~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BAS19-HE3-08 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BAS19-HE3-08

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BAS19-HE3-08

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 100V 200MA SOT23

Seri : Automotive, AEC-Q101

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 100V

Kouran - Mwayèn Rèktifye (Io) : 200mA

Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 200mA

Vitès : Small Signal =< 200mA (Io), Any Speed

Ranvèse Tan Reverse (trr) : 50ns

Kouran - Fèy Reverse @ Vr : 100nA @ 100V

Kapasite @ Vr, F : 5pF @ 0V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pake Aparèy Founisè : SOT-23

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BAS1 , BAS19-

dokiman pou BAS19-HE3-08

Fich : BAS19-HE3-08.pdf

pwodwi ki gen rapò pou BAS19-HE3-08 Vishay Semiconductor Diodes Division

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