TSM080N03EPQ56 RLG - MOSFET N-CH 30V 55A 8PDFN

Fabricant Nimewo Pati

TSM080N03EPQ56 RLG

Entèn Nimewo Pati

AX-TSM080N03EPQ56 RLG

Fabricant

Taiwan Semiconductor Corporation

Kout Deskripsyon

MOSFET N-CH 30V 55A 8PDFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2287255 Pieces

referans pri

~~USD 0.122664~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TSM080N03EPQ56 RLG nan stock pou vann.

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Espesifikasyon pou TSM080N03EPQ56 RLG

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PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TSM080N03EPQ56 RLG

Fabricant : Taiwan Semiconductor Corporation

Deskripsyon : MOSFET N-CH 30V 55A 8PDFN

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 55A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 8 mOhm @ 16A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 7.5nC @ 4.5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 750pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 54W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-PDFN (5x6)

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TSM080 , TSM080N03

dokiman pou TSM080N03EPQ56 RLG

Fich : TSM080N03EPQ56 RLG.pdf

pwodwi ki gen rapò pou TSM080N03EPQ56 RLG Taiwan Semiconductor Corporation

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