SI4967DY-T1-GE3 - MOSFET 2P-CH 12V 8SOIC

Fabricant Nimewo Pati

SI4967DY-T1-GE3

Entèn Nimewo Pati

AX-SI4967DY-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2P-CH 12V 8SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

32592 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI4967DY-T1-GE3 nan stock pou vann.

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Espesifikasyon pou SI4967DY-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI4967DY-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2P-CH 12V 8SOIC

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : 2 P-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 12V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : -

RD sou (Max) @ Id, Vgs : 23 mOhm @ 7.5A, 4.5V

Vgs (th) (Max) @ Id : 450mV @ 250µA (Min)

Chaje Gate (Qg) (Max) @ Vgs : 55nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : -

Pouvwa - Max : 2W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : 8-SO

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI496 , SI4967D

dokiman pou SI4967DY-T1-GE3

Fich : SI4967DY-T1-GE3.pdf

pwodwi ki gen rapò pou SI4967DY-T1-GE3 Vishay Siliconix

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