IRFD9113 - MOSFET P-CH 60V 600MA 4-DIP

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET P-CH 60V 600MA 4-DIP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
62500 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRFD9113 nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
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Espesifikasyon pou IRFD9113

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : IRFD9113
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET P-CH 60V 600MA 4-DIP
Seri : -
Estati Pati : Obsolete
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 600mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 1.6 Ohm @ 300mA, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 15V
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : 250pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : -
Operating Tanperati : -
Mounting Kalite : Through Hole
Pake Aparèy Founisè : 4-DIP, Hexdip, HVMDIP
Pake / Ka : 4-DIP (0.300", 7.62mm)
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : IR , IRFD

dokiman pou IRFD9113

Fich : IRFD9113.pdf

pwodwi ki gen rapò pou IRFD9113 Vishay Siliconix

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