VS-SD303C10S10C - DIODE GEN PURP 1KV 350A DO200AA
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
DIODE GEN PURP 1KV 350A DO200AA
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
11784 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen VS-SD303C10S10C nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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Espesifikasyon pou VS-SD303C10S10C
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : VS-SD303C10S10C
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1KV 350A DO200AA
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1000V
Kouran - Mwayèn Rèktifye (Io) : 350A
Voltage - Forward (Vf) (Max) @ Si : 2.26V @ 1100A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 1µs
Kouran - Fèy Reverse @ Vr : 35mA @ 1000V
Kapasite @ Vr, F : -
Mounting Kalite : Clamp On
Pake / Ka : DO-200AA, A-PUK
Pake Aparèy Founisè : DO-200AA, A-PUK
Operating Tanperati - Junction : -
Pwa : -
kondisyon : Nouvo ak orijinal
dokiman pou VS-SD303C10S10C
Fich : VS-SD303C10S10C.pdf
pwodwi ki gen rapò pou VS-SD303C10S10C Vishay Semiconductor Diodes Division
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