SI7812DN-T1-GE3 - MOSFET N-CH 75V 16A 1212-8 PPAK

Fabricant Nimewo Pati

SI7812DN-T1-GE3

Entèn Nimewo Pati

AX-SI7812DN-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 75V 16A 1212-8 PPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

440325 Pieces

referans pri

~~USD 0.63717~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI7812DN-T1-GE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Espesifikasyon pou SI7812DN-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI7812DN-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 75V 16A 1212-8 PPAK

Seri : TrenchFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 75V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 37 mOhm @ 7.2A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 24nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 840pF @ 35V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.8W (Ta), 52W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PowerPAK® 1212-8

Pake / Ka : PowerPAK® 1212-8

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI781 , SI7812D

dokiman pou SI7812DN-T1-GE3

Fich : SI7812DN-T1-GE3.pdf

pwodwi ki gen rapò pou SI7812DN-T1-GE3 Vishay Siliconix

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