DMN2010UDZ-7 - MOSFET 2N-CH 20V 11A U-DFN2535-6
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-DMN2010UDZ-7
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 20V 11A U-DFN2535-6
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1085430 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen DMN2010UDZ-7 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou DMN2010UDZ-7
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
DMN2010UDZ-7
Fabricant :
Diodes Incorporated
Deskripsyon :
MOSFET 2N-CH 20V 11A U-DFN2535-6
Seri :
-
Estati Pati :
Active
FET Kalite :
2 N-Channel (Dual) Common Drain
Karakteristik FET :
Standard
Drenaj nan Voltage Sous (Vdss) :
24V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
11A
RD sou (Max) @ Id, Vgs :
7 mOhm @ 5.5A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
33.2nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
2665pF @ 10V
Pouvwa - Max :
700mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-UDFN Exposed Pad
Pake Aparèy Founisè :
U-DFN2535-6
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou DMN2010UDZ-7
Fich :
DMN2010UDZ-7.pdf
pwodwi ki gen rapò pou DMN2010UDZ-7 Diodes Incorporated
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