SI5980DU-T1-GE3 - MOSFET 2N-CH 100V 2.5A CHIPFET

Fabricant Nimewo Pati

SI5980DU-T1-GE3

Entèn Nimewo Pati

AX-SI5980DU-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2N-CH 100V 2.5A CHIPFET

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

27657 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI5980DU-T1-GE3 nan stock pou vann.

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Espesifikasyon pou SI5980DU-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI5980DU-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2N-CH 100V 2.5A CHIPFET

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.5A

RD sou (Max) @ Id, Vgs : 567 mOhm @ 400mA, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 3.3nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 78pF @ 50V

Pouvwa - Max : 7.8W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : PowerPAK® ChipFET™ Dual

Pake Aparèy Founisè : PowerPAK® ChipFet Dual

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI598 , SI5980D

dokiman pou SI5980DU-T1-GE3

Fich : SI5980DU-T1-GE3.pdf

pwodwi ki gen rapò pou SI5980DU-T1-GE3 Vishay Siliconix

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