NTJS3151PT1G - MOSFET P-CH 12V 2.7A SOT-363

Fabricant Nimewo Pati

NTJS3151PT1G

Entèn Nimewo Pati

AX-NTJS3151PT1G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET P-CH 12V 2.7A SOT-363

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

4134455 Pieces

referans pri

~~USD 0.06786~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou NTJS3151PT1G

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NTJS3151PT1G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET P-CH 12V 2.7A SOT-363

Seri : -

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 12V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.7A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 60 mOhm @ 3.3A, 4.5V

Vgs (th) (Max) @ Id : 1.2V @ 100µA

Chaje Gate (Qg) (Max) @ Vgs : 8.6nC @ 4.5V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 850pF @ 12V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 625mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SC-88/SC70-6/SOT-363

Pake / Ka : 6-TSSOP, SC-88, SOT-363

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NTJS , NTJS31

dokiman pou NTJS3151PT1G

Fich : NTJS3151PT1G.pdf

pwodwi ki gen rapò pou NTJS3151PT1G ON Semiconductor

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