RS1JHE3_A/I - DIODE GEN PURP 600V 1A DO214AC

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
DIODE GEN PURP 600V 1A DO214AC
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
4273110 Pieces
referans pri
USD 0.065658
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RS1JHE3_A/I nan stock pou vann.
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Espesifikasyon pou RS1JHE3_A/I

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : RS1JHE3_A/I
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 1A DO214AC
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 250ns
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Kapasite @ Vr, F : 7pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AC, SMA
Pake Aparèy Founisè : DO-214AC (SMA)
Operating Tanperati - Junction : -55°C ~ 150°C
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : RS1 , RS1JH

dokiman pou RS1JHE3_A/I

pwodwi ki gen rapò pou RS1JHE3_A/I Vishay Semiconductor Diodes Division

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