TPC8A02-H(TE12L,Q) - MOSFET N-CH 30V 16A SOP8 2-6J1B

Fabricant Nimewo Pati

TPC8A02-H(TE12L,Q)

Entèn Nimewo Pati

AX-TPC8A02-H(TE12L,Q)

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 30V 16A SOP8 2-6J1B

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

51630 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TPC8A02-H(TE12L,Q) nan stock pou vann.

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Espesifikasyon pou TPC8A02-H(TE12L,Q)

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TPC8A02-H(TE12L,Q)

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 30V 16A SOP8 2-6J1B

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 5.6 mOhm @ 8A, 10V

Vgs (th) (Max) @ Id : 2.3V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 34nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1970pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Ta)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SOP (5.5x6.0)

Pake / Ka : 8-SOIC (0.173", 4.40mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TPC8A0 , TPC8A02-H

dokiman pou TPC8A02-H(TE12L,Q)

Fich : TPC8A02-H(TE12L,Q).pdf

pwodwi ki gen rapò pou TPC8A02-H(TE12L,Q) Toshiba Semiconductor and Storage

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