FDC636P - MOSFET P-CH 20V 2.8A SSOT-6

Fabricant Nimewo Pati

FDC636P

Entèn Nimewo Pati

AX-FDC636P

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET P-CH 20V 2.8A SSOT-6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

5632 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDC636P nan stock pou vann.

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Espesifikasyon pou FDC636P

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDC636P

Fabricant : ON Semiconductor

Deskripsyon : MOSFET P-CH 20V 2.8A SSOT-6

Seri : -

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.8A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V

RD sou (Max) @ Id, Vgs : 130 mOhm @ 2.8A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 8.5nC @ 4.5V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 390pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.6W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SuperSOT™-6

Pake / Ka : SOT-23-6 Thin, TSOT-23-6

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FD , FDC

dokiman pou FDC636P

Fich : FDC636P.pdf

pwodwi ki gen rapò pou FDC636P ON Semiconductor

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