IAUT165N08S5N029ATMA2 - MOSFET N-CH 165A 80V 120V 8HSOF

Fabricant Nimewo Pati

IAUT165N08S5N029ATMA2

Entèn Nimewo Pati

AX-IAUT165N08S5N029ATMA2

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 165A 80V 120V 8HSOF

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

247700 Pieces

referans pri

~~USD 1.132626~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IAUT165N08S5N029ATMA2 nan stock pou vann.

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Espesifikasyon pou IAUT165N08S5N029ATMA2

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IAUT165N08S5N029ATMA2

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 165A 80V 120V 8HSOF

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 80V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 165A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 2.9 mOhm @ 80A, 10V

Vgs (th) (Max) @ Id : 3.8V @ 108µA

Chaje Gate (Qg) (Max) @ Vgs : 90nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 6370pF @ 40V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 167W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-HSOF-8-1

Pake / Ka : 8-PowerSFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IAUT165 , IAUT165N08

dokiman pou IAUT165N08S5N029ATMA2

Fich : IAUT165N08S5N029ATMA2.pdf

pwodwi ki gen rapò pou IAUT165N08S5N029ATMA2 Infineon Technologies

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