IRF6618TR1PBF - MOSFET N-CH 30V 30A DIRECTFET

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET N-CH 30V 30A DIRECTFET
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
8991 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRF6618TR1PBF nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Paypal (Credit Card)
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Espesifikasyon pou IRF6618TR1PBF

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : IRF6618TR1PBF
Fabricant : Infineon Technologies
Deskripsyon : MOSFET N-CH 30V 30A DIRECTFET
Seri : HEXFET®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Ta), 170A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 2.2 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2.35V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 65nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5640pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.8W (Ta), 89W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DIRECTFET™ MT
Pake / Ka : DirectFET™ Isometric MT
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : IRF6 , IRF661

dokiman pou IRF6618TR1PBF

pwodwi ki gen rapò pou IRF6618TR1PBF Infineon Technologies

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