SIB800EDK-T1-GE3 - MOSFET N-CH 20V 1.5A SC75-6

Fabricant Nimewo Pati

SIB800EDK-T1-GE3

Entèn Nimewo Pati

AX-SIB800EDK-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 20V 1.5A SC75-6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

6744 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SIB800EDK-T1-GE3 nan stock pou vann.

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Espesifikasyon pou SIB800EDK-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SIB800EDK-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 20V 1.5A SC75-6

Seri : LITTLE FOOT®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V

RD sou (Max) @ Id, Vgs : 225 mOhm @ 1.6A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 1.7nC @ 4.5V

Vgs (Max) : ±6V

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : Schottky Diode (Isolated)

Disipasyon Pouvwa (Max) : 1.1W (Ta), 3.1W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PowerPAK® SC-75-6L Single

Pake / Ka : PowerPAK® SC-75-6L

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SIB80 , SIB800ED

dokiman pou SIB800EDK-T1-GE3

Fich : SIB800EDK-T1-GE3.pdf

pwodwi ki gen rapò pou SIB800EDK-T1-GE3 Vishay Siliconix

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