RDN080N25FU6 - MOSFET N-CH 250V 8A TO220FN

Fabricant Nimewo Pati

RDN080N25FU6

Entèn Nimewo Pati

AX-RDN080N25FU6

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET N-CH 250V 8A TO220FN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

8072 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou RDN080N25FU6

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RDN080N25FU6

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET N-CH 250V 8A TO220FN

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 250V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 500 mOhm @ 4A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 543pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 35W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220FN

Pake / Ka : TO-220-3 Full Pack

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RDN0 , RDN080

dokiman pou RDN080N25FU6

Fich : RDN080N25FU6.pdf

pwodwi ki gen rapò pou RDN080N25FU6 Rohm Semiconductor

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