SIHG22N65E-GE3 - MOSFET N-CH 650V 22A TO-247AC

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 650V 22A TO-247AC
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
128450 Pieces
referans pri
USD 2.184084
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SIHG22N65E-GE3 nan stock pou vann.
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Espesifikasyon pou SIHG22N65E-GE3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SIHG22N65E-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N-CH 650V 22A TO-247AC
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 180 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 110nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 2415pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 227W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AC
Pake / Ka : TO-247-3
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SIHG , SIHG22N

dokiman pou SIHG22N65E-GE3

pwodwi ki gen rapò pou SIHG22N65E-GE3 Vishay Siliconix

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