IRFB9N65APBF - MOSFET N-CH 650V 8.5A TO-220AB

Fabricant Nimewo Pati

IRFB9N65APBF

Entèn Nimewo Pati

AX-IRFB9N65APBF

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 650V 8.5A TO-220AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

143870 Pieces

referans pri

~~USD 1.95~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRFB9N65APBF nan stock pou vann.

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Espesifikasyon pou IRFB9N65APBF

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PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRFB9N65APBF

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 650V 8.5A TO-220AB

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 650V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 930 mOhm @ 5.1A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 48nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1417pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 167W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220AB

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRFB , IRFB9N

dokiman pou IRFB9N65APBF

Fich : IRFB9N65APBF.pdf

pwodwi ki gen rapò pou IRFB9N65APBF Vishay Siliconix

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