FD-DF80R12W1H3_B52 - IGBT MODULE VCES 1200V 40A

Fabricant Nimewo Pati

FD-DF80R12W1H3_B52

Entèn Nimewo Pati

AX-FD-DF80R12W1H3_B52

Fabricant

Infineon Technologies

Kout Deskripsyon

IGBT MODULE VCES 1200V 40A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

19784 Pieces

referans pri

~~USD 22.675752~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FD-DF80R12W1H3_B52 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou FD-DF80R12W1H3_B52

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FD-DF80R12W1H3_B52

Fabricant : Infineon Technologies

Deskripsyon : IGBT MODULE VCES 1200V 40A

Seri : -

Estati Pati : Active

Kalite IGBT : Trench Field Stop

Nou konte genyen : Single

Voltage - Pèseptè ki emèt deba (Max) : 1200V

Kouran - Pèseptè (Ic) (Max) : 40A

Pouvwa - Max : 215W

Vce (sou) (Max) @ Vge, Ic : 2.4V @ 15V, 40A

Kouran - Cutoff Pèseptè (Max) : 1mA

Antre kapasite (Cies) @ Vce : 235nF @ 25V

Antre : Standard

NTC thermistor : Yes

Operating Tanperati : -40°C ~ 125°C

Mounting Kalite : Chassis Mount

Pake / Ka : Module

Pake Aparèy Founisè : Module

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FD-DF8 , FD-DF80R1

dokiman pou FD-DF80R12W1H3_B52

Fich : FD-DF80R12W1H3_B52.pdf

pwodwi ki gen rapò pou FD-DF80R12W1H3_B52 Infineon Technologies

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