FD-DF80R12W1H3_B52 - IGBT MODULE VCES 1200V 40A
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
IGBT MODULE VCES 1200V 40A
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
19784 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen FD-DF80R12W1H3_B52 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou FD-DF80R12W1H3_B52
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
FD-DF80R12W1H3_B52
Fabricant :
Infineon Technologies
Deskripsyon :
IGBT MODULE VCES 1200V 40A
Seri :
-
Estati Pati :
Active
Kalite IGBT :
Trench Field Stop
Nou konte genyen :
Single
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
40A
Pouvwa - Max :
215W
Vce (sou) (Max) @ Vge, Ic :
2.4V @ 15V, 40A
Kouran - Cutoff Pèseptè (Max) :
1mA
Antre kapasite (Cies) @ Vce :
235nF @ 25V
Antre :
Standard
NTC thermistor :
Yes
Operating Tanperati :
-40°C ~ 125°C
Mounting Kalite :
Chassis Mount
Pake / Ka :
Module
Pake Aparèy Founisè :
Module
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou FD-DF80R12W1H3_B52
Fich :
FD-DF80R12W1H3_B52.pdf
pwodwi ki gen rapò pou FD-DF80R12W1H3_B52 Infineon Technologies
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