EPC2103ENG - GAN TRANS 2N-CH 80V BUMPED DIE

Fabricant Nimewo Pati

EPC2103ENG

Entèn Nimewo Pati

AX-EPC2103ENG

Fabricant

EPC

Kout Deskripsyon

GAN TRANS 2N-CH 80V BUMPED DIE

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

28483 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen EPC2103ENG nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou EPC2103ENG

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : EPC2103ENG

Fabricant : EPC

Deskripsyon : GAN TRANS 2N-CH 80V BUMPED DIE

Seri : eGaN®

Estati Pati : Active

FET Kalite : 2 N-Channel (Half Bridge)

Karakteristik FET : GaNFET (Gallium Nitride)

Drenaj nan Voltage Sous (Vdss) : 80V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 23A

RD sou (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 7mA

Chaje Gate (Qg) (Max) @ Vgs : 6.5nC @ 5V

Antre kapasite (Ciss) (Max) @ Vds : 760pF @ 40V

Pouvwa - Max : -

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : Die

Pake Aparèy Founisè : Die

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : EPC , EPC21

dokiman pou EPC2103ENG

Fich : EPC2103ENG.pdf

pwodwi ki gen rapò pou EPC2103ENG EPC

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