RFD10P03LSM - MOSFET P-CH 30V 10A TO-252AA

Fabricant Nimewo Pati

RFD10P03LSM

Entèn Nimewo Pati

AX-RFD10P03LSM

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET P-CH 30V 10A TO-252AA

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

65495 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RFD10P03LSM nan stock pou vann.

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Espesifikasyon pou RFD10P03LSM

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RFD10P03LSM

Fabricant : ON Semiconductor

Deskripsyon : MOSFET P-CH 30V 10A TO-252AA

Seri : -

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : -

RD sou (Max) @ Id, Vgs : 200 mOhm @ 10A, 5V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V

Vgs (Max) : -

Antre kapasite (Ciss) (Max) @ Vds : 1035pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : -

Operating Tanperati : -

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252-3

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RFD , RFD10

dokiman pou RFD10P03LSM

Fich : RFD10P03LSM.pdf

pwodwi ki gen rapò pou RFD10P03LSM ON Semiconductor

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