EGF1C-E3/67A - DIODE GEN PURP 150V 1A DO214BA

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
DIODE GEN PURP 150V 1A DO214BA
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
2275790 Pieces
referans pri
USD 0.123282
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen EGF1C-E3/67A nan stock pou vann.
D 'opsyon ak anbake tan:
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FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou EGF1C-E3/67A

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : EGF1C-E3/67A
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 150V 1A DO214BA
Seri : SUPERECTIFIER®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 150V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 5µA @ 150V
Kapasite @ Vr, F : 15pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214BA
Pake Aparèy Founisè : DO-214BA (GF1)
Operating Tanperati - Junction : -65°C ~ 175°C
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : EGF1 , EGF1C-

dokiman pou EGF1C-E3/67A

pwodwi ki gen rapò pou EGF1C-E3/67A Vishay Semiconductor Diodes Division

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