CSD17313Q2Q1T - MOSFET N-CH 30V 5A 6WSON

Fabricant Nimewo Pati

CSD17313Q2Q1T

Entèn Nimewo Pati

AX-CSD17313Q2Q1T

Fabricant

Texas Instruments

Kout Deskripsyon

MOSFET N-CH 30V 5A 6WSON

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1922720 Pieces

referans pri

~~USD 0.14592~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen CSD17313Q2Q1T nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou CSD17313Q2Q1T

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : CSD17313Q2Q1T

Fabricant : Texas Instruments

Deskripsyon : MOSFET N-CH 30V 5A 6WSON

Seri : NexFET™

Estati Pati : Not For New Designs

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 3V, 8V

RD sou (Max) @ Id, Vgs : 30 mOhm @ 4A, 8V

Vgs (th) (Max) @ Id : 1.8V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 2.7nC @ 4.5V

Vgs (Max) : +10V, -8V

Antre kapasite (Ciss) (Max) @ Vds : 340pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.4W (Ta), 17W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 6-WSON (2x2)

Pake / Ka : 6-WDFN Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : CSD1 , CSD173

dokiman pou CSD17313Q2Q1T

Fich : CSD17313Q2Q1T.pdf

pwodwi ki gen rapò pou CSD17313Q2Q1T Texas Instruments

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