FDB1D7N10CL7 - FET 100V 1.7 MOHM D2PAK

Fabricant Nimewo Pati

FDB1D7N10CL7

Entèn Nimewo Pati

AX-FDB1D7N10CL7

Fabricant

ON Semiconductor

Kout Deskripsyon

FET 100V 1.7 MOHM D2PAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

61365 Pieces

referans pri

~~USD 4.57158~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDB1D7N10CL7 nan stock pou vann.

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Espesifikasyon pou FDB1D7N10CL7

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDB1D7N10CL7

Fabricant : ON Semiconductor

Deskripsyon : FET 100V 1.7 MOHM D2PAK

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 268A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 15V

RD sou (Max) @ Id, Vgs : 1.65 mOhm @ 100A, 15V

Vgs (th) (Max) @ Id : 4V @ 700µA

Chaje Gate (Qg) (Max) @ Vgs : 163nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 11600pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 250W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK (TO-263)

Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDB1 , FDB1D7

dokiman pou FDB1D7N10CL7

Fich : FDB1D7N10CL7.pdf

pwodwi ki gen rapò pou FDB1D7N10CL7 ON Semiconductor

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