FDMS3660AS - MOSFET 2N-CH 30V 13A/30A 8QFN

Fabricant Nimewo Pati

FDMS3660AS

Entèn Nimewo Pati

AX-FDMS3660AS

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET 2N-CH 30V 13A/30A 8QFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

692125 Pieces

referans pri

~~USD 0.40536~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDMS3660AS nan stock pou vann.

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Espesifikasyon pou FDMS3660AS

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDMS3660AS

Fabricant : ON Semiconductor

Deskripsyon : MOSFET 2N-CH 30V 13A/30A 8QFN

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13A, 30A

RD sou (Max) @ Id, Vgs : 8 mOhm @ 13A, 10V

Vgs (th) (Max) @ Id : 2.7V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 30nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 2230pF @ 15V

Pouvwa - Max : 1W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-PowerTDFN

Pake Aparèy Founisè : Power56

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDM , FDMS3

dokiman pou FDMS3660AS

Fich : FDMS3660AS.pdf

pwodwi ki gen rapò pou FDMS3660AS ON Semiconductor

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