HAT2165H-EL-E - MOSFET N-CH 30V 55A LFPAK

Fabricant Nimewo Pati

HAT2165H-EL-E

Entèn Nimewo Pati

AX-HAT2165H-EL-E

Fabricant

Renesas Electronics America

Kout Deskripsyon

MOSFET N-CH 30V 55A LFPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

367030 Pieces

referans pri

~~USD 0.7644~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen HAT2165H-EL-E nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou HAT2165H-EL-E

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : HAT2165H-EL-E

Fabricant : Renesas Electronics America

Deskripsyon : MOSFET N-CH 30V 55A LFPAK

Seri : -

Estati Pati : Not For New Designs

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 55A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 3.3 mOhm @ 27.5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 33nC @ 4.5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 5180pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 30W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : LFPAK

Pake / Ka : SC-100, SOT-669

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : HAT2 , HAT216

dokiman pou HAT2165H-EL-E

Fich : HAT2165H-EL-E.pdf

pwodwi ki gen rapò pou HAT2165H-EL-E Renesas Electronics America

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