IRFSL9N60ATRR - MOSFET N-CH 600V 9.2A TO-262

Fabricant Nimewo Pati

IRFSL9N60ATRR

Entèn Nimewo Pati

AX-IRFSL9N60ATRR

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 600V 9.2A TO-262

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

64275 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRFSL9N60ATRR nan stock pou vann.

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Espesifikasyon pou IRFSL9N60ATRR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRFSL9N60ATRR

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 600V 9.2A TO-262

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.2A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 750 mOhm @ 5.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 49nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1400pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 170W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I2PAK

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRFS , IRFSL9

dokiman pou IRFSL9N60ATRR

Fich : IRFSL9N60ATRR.pdf

pwodwi ki gen rapò pou IRFSL9N60ATRR Vishay Siliconix

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