EDB1316BDBH-1DAAT-F-R TR - IC DRAM 1G PARALLEL 134VFBGA

Fabricant Nimewo Pati

EDB1316BDBH-1DAAT-F-R TR

Entèn Nimewo Pati

AX-EDB1316BDBH-1DAAT-F-R TR

Fabricant

Micron Technology Inc.

Kout Deskripsyon

IC DRAM 1G PARALLEL 134VFBGA

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

70040 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen EDB1316BDBH-1DAAT-F-R TR nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou EDB1316BDBH-1DAAT-F-R TR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : EDB1316BDBH-1DAAT-F-R TR

Fabricant : Micron Technology Inc.

Deskripsyon : IC DRAM 1G PARALLEL 134VFBGA

Seri : -

Estati Pati : Active

Kalite memwa yo : Volatile

Fòma memwa : DRAM

Teknoloji : SDRAM - Mobile LPDDR2

Size memwa : 1Gb (64M x 16)

Frè frekans lan : 533MHz

Ekri Sik Tan - Pawòl, Page : -

Tan aksè : -

Entèfas memwa : Parallel

Voltage - Pwovizyon pou : 1.14V ~ 1.95V

Operating Tanperati : -40°C ~ 105°C (TC)

Mounting Kalite : Surface Mount

Pake / Ka : 134-VFBGA

Pake Aparèy Founisè : 134-VFBGA (10x11.5)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : EDB1316B , EDB1316BDBH-

dokiman pou EDB1316BDBH-1DAAT-F-R TR

Fich : EDB1316BDBH-1DAAT-F-R TR.pdf

pwodwi ki gen rapò pou EDB1316BDBH-1DAAT-F-R TR Micron Technology Inc.

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