NDD60N900U1-35G - MOSFET N-CH 600V 5.9A IPAK-3

Fabricant Nimewo Pati

NDD60N900U1-35G

Entèn Nimewo Pati

AX-NDD60N900U1-35G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 600V 5.9A IPAK-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

21832 Pieces

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~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou NDD60N900U1-35G

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Nimewo pati : NDD60N900U1-35G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 600V 5.9A IPAK-3

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.7A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 900 mOhm @ 2.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 12nC @ 10V

Vgs (Max) : ±25V

Antre kapasite (Ciss) (Max) @ Vds : 360pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 74W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I-PAK

Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NDD60 , NDD60N9

dokiman pou NDD60N900U1-35G

Fich : NDD60N900U1-35G.pdf

pwodwi ki gen rapò pou NDD60N900U1-35G ON Semiconductor

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