ISL6612BECBZ-T - IC MOSFET DRVR SYNC BUCK 8EPSOIC
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
IC MOSFET DRVR SYNC BUCK 8EPSOIC
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
38370 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen ISL6612BECBZ-T nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou ISL6612BECBZ-T
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
ISL6612BECBZ-T
Fabricant :
Renesas Electronics America Inc.
Deskripsyon :
IC MOSFET DRVR SYNC BUCK 8EPSOIC
Seri :
-
Estati Pati :
Obsolete
Kondwi konte genyen :
Half-Bridge
Kalite Chèn :
Synchronous
Kantite Chofè yo :
2
Kalite Gate :
N-Channel MOSFET
Voltage - Pwovizyon pou :
7V ~ 13.2V
Vòltaj lojik - VIL, VIH :
-
Kouran - Peak Sòti (Sous, Lavabo) :
1.25A, 2A
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
36V
Rise / Fall Time (Tip) :
26ns, 18ns
Operating Tanperati :
0°C ~ 125°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width) Exposed Pad
Pake Aparèy Founisè :
8-SOIC-EP
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou ISL6612BECBZ-T
Fich :
ISL6612BECBZ-T.pdf
pwodwi ki gen rapò pou ISL6612BECBZ-T Renesas Electronics America Inc.
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