SI2335DS-T1-GE3 - MOSFET P-CH 12V 3.2A SOT23-3

Fabricant Nimewo Pati

SI2335DS-T1-GE3

Entèn Nimewo Pati

AX-SI2335DS-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET P-CH 12V 3.2A SOT23-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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11264 Pieces

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pri nou

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AXE Semiconductor gen SI2335DS-T1-GE3 nan stock pou vann.

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Espesifikasyon pou SI2335DS-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI2335DS-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET P-CH 12V 3.2A SOT23-3

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 12V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.2A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 51 mOhm @ 4A, 4.5V

Vgs (th) (Max) @ Id : 450mV @ 250µA (Min)

Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 4.5V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 1225pF @ 6V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 750mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-23-3 (TO-236)

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI233 , SI2335D

dokiman pou SI2335DS-T1-GE3

Fich : SI2335DS-T1-GE3.pdf

pwodwi ki gen rapò pou SI2335DS-T1-GE3 Vishay Siliconix

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